? semiconductor components industries, llc, 2008 july, 2008 ? rev. 6 1 publication order number: mjf15030/d mjf15030 (npn), mjf15031 (pnp) complementary power transistors for isolated package applications designed for general ? purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. features ? electrically similar to the popular mje15030 and mje15031 ? 150 v ceo(sus) ? 8 a rated collector current ? no isolating washers required ? reduced system cost ? high current gain ? bandwidth product ? f t = 30 mhz (min) @ i c = 500 madc ? ul recognized, file #e69369, to 3500 v rms isolation ? pb ? free packages are available* ???????????????????? ???????????????????? maximum ratings ???????????? ???? ???? ??? ???????????? ???????????? collector ? emitter voltage ???? ???? ???? ???? ??? ??? ???????????? ???????????? ? base voltage ???? ???? ???? ???? ??? ??? ???????????? ???????????? ? base voltage ???? ???? ???? ???? ??? ??? ???????????? ???????????? ???????????? 30%, t a = 25 c) per figure 11 ???? ???? ???? ???? ???? ???? ??? ??? ??? ???????????? ???????????? ? continuous ? peak ???? ???? ???? ???? ??? ??? ???????????? ???????????? ???? ???? ???? ???? ??? ??? ???????????? ???????????? ???????????? c derate above 25 c ???? ???? ???? ???? ???? ???? ??? ??? ??? c ???????????? ???????????? c derate above 25 c ???? ???? ???? ???? ??? ??? c ???????????? ???????????? ???? ???? ???? ???? ??? ??? c ???????????????????? ???????????????????? thermal characteristics ???????????? ???????????? ???? ???? ???? ???? ??? ??? ???????????? ???????????? thermal resistance, junction ? to ? ambient ???? ???? ja ???? ???? ??? ??? c/w ???????????? ???????????? ? to ? case (note 2) ???? ???? jc ???? ???? ??? ??? c/w ???????????? ???? ???? ??? c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. proper strike and creepage distance must be provided. 2. measurement made with thermocouple contacting the bottom insulated surface (in a location beneath the die), the devices mounted on a heatsink with thermal grease and a mounting torque of 6 in. lbs. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device package shipping ordering information mjf15030 to ? 220 fullpack to ? 220 fullpack case 221d style 2 50 units/rail 3 1 complementary silicon power transistors 8 amperes 150 volts, 36 watts 2 http://onsemi.com mjf15031 50 units/rail mjf15031g 50 units/rail MJF15030G to ? 220 fullpack (pb ? free) 50 units/rail mjf1503x = specific device code x = 0 or 1 g=pb ? free package a = assembly location y = year ww = work week mjf1503xg ayww marking diagram to ? 220 fullpack to ? 220 fullpack (pb ? free)
mjf15030 (npn), mjf15031 (pnp) http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? (t c = 25 c unless otherwise noted) ????????????????????? ????????????????????? characteristic ????? ????? ???? ???? ??? ??? ???? ???? ????????????????????????????????? ????????????????????????????????? ????????????????????? ????????????????????? collector ? emitter sustaining voltage (note 3) (i c = 10 madc, i b = 0) ????? ????? ???? ???? ??? ??? ? ???? ???? vdc ????????????????????? ????????????????????? ????????????????????? ????? ????? ????? ???? ???? ???? ? ??? ??? ??? 10 ???? ???? ???? adc ????????????????????? ????????????????????? ????? ????? ???? ???? ? ??? ??? 10 ???? ???? adc ????????????????????? ????????????????????? ????????????????????? ????? ????? ????? ???? ???? ???? ? ??? ??? ??? 10 ???? ???? ???? adc ????????????????????????????????? ????????????????????????????????? on characteristics (note 3) ????????????????????? ????????????????????? ????????????????????? ????????????????????? ????? ????? ????? ????? ???? ???? ???? ???? ??? ??? ??? ??? ? ? ? ? ???? ???? ???? ???? ????????????????????? ????????????????????? ????? ????? ?????? ?????? typ ???? ???? ???? ????????????????????? ????????????????????? dc current gain linearity (v ce from 2 v to 20 v, i c from 0.1 a to 3 a) (npn to pnp) ????? ????? ?????? ?????? ????????????????????? ????????????????????? ????????????????????? ? emitter saturation voltage (i c = 1 adc, i b = 0.1 adc) ????? ????? ????? ???? ???? ???? ? ??? ??? ??? 0.5 ???? ???? ???? ????????????????????? ????????????????????? ? emitter on voltage (i c = 1 adc, v ce = 2 vdc) ????? ????? ???? ???? ? ??? ??? 1 ???? ???? ????????????????????????????????? ????????????????????????????????? dynamic characteristics ????????????????????? ????????????????????? ????????????????????? current gain ? bandwidth product (note 4) (i c = 500 madc, v ce = 10 vdc, f test = 10 mhz) ????? ????? ????? ???? ???? ???? ??? ??? ??? ? ???? ???? ???? mhz 3. pulse test: pulse width 300 s, duty cycle 2%. 4. f t = ? h fe ?? f test . t, time (ms) 1 0.01 0.3 0.2 0.1 0.05 0.02 r(t), transient thermal resistance (normalized) 0.5 10 30 50 100 300 500 1k 3k 5k single pulse r jc(t) = r(t) r jc t j(pk) - t c = p (pk) r jc (t) 15 3 10k 0.5 0.3 0.03 0.1 0.2 20 200 2k 2 figure 1. thermal response
mjf15030 (npn), mjf15031 (pnp) http://onsemi.com 3 i c , collector current (amp) figure 2. forward bias safe operating area 100 s 5 ms dc 20 3 v ce , collector-emitter voltage (volts) 5 200 5 3 10 2 0.1 0.03 wirebond limit thermal limit secondary breakdown limit @ t c = 25 c 10 30 50 70 1 0.02 100 2720 0.05 0.2 0.3 0.5 150 there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figures 2 and 3 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) < 150 c. t j(pk) may be calculated from the data in figure 1. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. f t , current gain bandwidth product (mhz) c, capacitance (pf) i c , collector current (amp) i c , collector current (amp) 60 f, frequency (mhz) 0 figure 3. reverse bias switching safe operating area figure 4. capacitances 10 v r , reverse voltage (volts) 30 50 100 figure 5. small ? signal current gain figure 6. current gain ? bandwidth product 1000 50 500 1.5 c ib (npn) 150 100 200 10 7 90 20 50 100 npn 5 3 30 5 50 10 20 100 0.1 5 10 0.5 2 0.2 1 5 v 8 100 v ce , collector-emitter voltage (volts) 110 5 2 1 130 150 3 0 0 120 140 v be(off) = 9 v i c /i b = 10 t c = 25 c h fe , small-signal current gain v ce = 10 v i c = 0.5 a t c = 25 c 10 0.5 5 10 13 0.7 27 30 20 c ib (pnp) pnp (npn) (pnp) 0 v 1.5 v 3 v c ob (pnp) c ob (npn)
mjf15030 (npn), mjf15031 (pnp) http://onsemi.com 4 1k 10 1510 0.1 i c , collector current (amp) 2 200 150 500 50 70 100 20 30 0.5 0.2 figure 7a. mjf15030 npn figure 7b. mjf15031 pnp i c , collector current (amp) t j = 150 c h fe , dc current gain t j = 25 c t j = -55 c v ce = 2 v 1k 10 1510 0.1 2 200 500 50 100 20 0.5 0.2 h fe , dc current gain v ce = 2 v t j = 150 c t j = 25 c t j = -55 c dc current gain t, time (s) t, time (s) 1 0.2 0.5 10 0.2 0.1 0.5 0.05 0.02 2 0.03 0.01 figure 8a. mjf15030 npn 0.1 1 5 figure 9. turn ? on times figure 10. turn ? off times figure 8b. mjf15031 pnp v be(sat) @ i c /i b = 10 t j = 25 c i c /i b = 10 v cc = 80 v i c /i b = 10 t j = 25 c v be(on) @ v ce = 2 v v ce(sat) @ i c /i b = 20 i c , collector current (amp) 3 0.1 5 0.5 2 10 0.1 5 10 0.5 2 0.2 1 0.2 i c , collector current (amp) 1.2 1.6 0.6 1 0.1 5 10 0.5 2 0.2 1 0.2 i c , collector current (amp) 1.4 0 1.8 0.8 1 0.1 5 10 0.5 2 0.2 1 0.4 t d (npn, pnp) t r (pnp) v cc = 80 v i c /i b = 10, i b1 = i b2 t s (npn) t j = 25 c i c , collector current (amp) v, voltage (volts) v, voltage (volts) v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 20 v be(sat) @ i c /i b = 20 i c /i b = 10 t r (npn) 0.3 1 t f (npn) t f (pnp) t s (pnp) ?on? voltage
mjf15030 (npn), mjf15031 (pnp) http://onsemi.com 5 test conditions for isolation tests* fully isolated package leads heatsink 0.110 min figure 11. mounting position *measurement made between leads and heatsink with all leads shorted together. 4-40 screw plain washer heatsink compression washer nut clip heatsink laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is suf ficient to provide maximum power dissipation capability . the compression washer helps to maintain a constant pressure on the p ackage over time and during large temperature excursions. destructive laboratory tests show that using a hex head 4 ? 40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. additional te sts on slotted 4 ? 40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely af fecting the package. however, in order to positively ensure the package integrity of the fully isolated device, on semiconductor does not recommend exceeding 10 in . lbs of mount- ing torque under any mounting conditions. figure 12. typical mounting techniques* mounting information ** for more information about mounting power semiconductors see application note an1040.
mjf15030 (npn), mjf15031 (pnp) http://onsemi.com 6 package dimensions to ? 220 fullpak case 221d ? 03 issue j style 2: pin 1. base 2. collector 3. emitter dim a min max min max millimeters 0.617 0.635 15.67 16.12 inches b 0.392 0.419 9.96 10.63 c 0.177 0.193 4.50 4.90 d 0.024 0.039 0.60 1.00 f 0.116 0.129 2.95 3.28 g 0.100 bsc 2.54 bsc h 0.118 0.135 3.00 3.43 j 0.018 0.025 0.45 0.63 k 0.503 0.541 12.78 13.73 l 0.048 0.058 1.23 1.47 n 0.200 bsc 5.08 bsc q 0.122 0.138 3.10 3.50 r 0.099 0.117 2.51 2.96 s 0.092 0.113 2.34 2.87 u 0.239 0.271 6.06 6.88 ? b ? ? y ? g n d l k h a f q 3 pl 123 m b m 0.25 (0.010) y seating plane ? t ? u c s j r notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch 3. 221d-01 thru 221d-02 obsolete, new standard 221d-03. on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 mjf15030/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loca l sales representative
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